(1) University of Glasgow, Kelvin Building, Glasgow G12 8QQ, Scotland.
(2) CERN, PH-Department, CH-1211, Geneva 23, Switzerland.
Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high luminosity HEP experiments. A thorough study of 24 GeV/c proton irradiated p+ in n FZ, DOFZ and MCz silicon detectors has been conducted using the standard radiation damage characterization tools IV and CV, the Transient Current Technique (TCT) and annealing studies. The first systematic study on the effective trapping time in MCz silicon has been performed. The results show that the introduction rate for the traps responsible for the degradation of the effective trapping time for MCz material agrees with the introduction rate for FZ and DOFZ silicon. An annealing study compares the evolution of the effective trapping time, the effective space charge density and the current related damage parameters for MCz and DOFZ silicon.
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