GLAS-PPE/2005-14

Wide Bandgap Semiconductor Detectors For Harsh Radiation Environments

J. Grant(1), W. Cunningham(1), A. Blue(1), V. O'Shea(1), E. Gaubas(2), J. Vaitkus(2), M. Rahman(1)

(1) University of Glasgow, Glasgow, G12 8QQ, Scotland
(2) Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9 -lll, 2040, Vilnius, Lithuania

In this work two wide bandgap materials, silicon carbide (SiC) and gallium nitride (GaN), were investigated for their performance in harsh radiation environments. Schottky devices were fabricated on vanadium doped SiC (V-SiC), Okmetic semi insulating (SI) non-vanadium doped SiC, SI GaN grown by MOCVD (metal organic chemical vapour deposition) and bulk GaN. Completed devices were electrically characterised and the CCE (charge collection efficiency) calculated from pulse height spectra of ²⁴¹Am α particles. SI GaN samples were irradiated with estimated neutron fluences of up to 10¹⁶n/cm² (Ljubljana), proton fluences of 10¹⁶p/cm² (CERN), and a dose of 600 Mrad of 10 keV X-rays (ICSTM, London). V-SiC samples were irradiated up to 5 x10¹⁴π/cm² using 300MeV/c pions (PSI).

International Workshop on Radiation Imaging Detectors 2004
25-29 July 2004, Glasgow, UK

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