(1) University of Glasgow, Kelvin Building, Glasgow G12 8QQ, Scotland.
(2) Engineering and Instrumentation Department, Rutherford Appleton Laboratory, Didcot, OX11 0QX, UK
Monolithic active pixel sensor technology is a relatively inexpensive and reliable alternative to that of CCDs. Potential scientific applications for these devices include charged particle detection, indirect X-rays and neutron imaging. This paper reports on the characterisation and timing parameters optimisation of three different sensor variants from the HEPAPS4 family. The sensors feature standard three nMOS design but differ in the implementation of the photosensitive element. They have an array of $1024 \times 384$ pixels of $15 \times 15 ~\mu m^2$ and $20 ~\mu m$ epi-layer. Photonic methods are used to measure conversion gain, linearity, signal to noise ratio, dynamic range, pixel to pixel uniformity, dark current and read noise.
8th International Conference on Position Sensitive Detectors
1-5 September 2008, Glasgow, Scotland