GLAS-PPE/2009-14

A review of MI3 produced Active Pixel Sensors

A. Blue(1), R. Bates(1), S. E. Bohndiek(2), A. Clark(3), F. Doherty(1), A. Laing(1), D. Maneuski(1), R. Turchetta(3), V. O'Shea(1)

(1) University of Glasgow, Kelvin Building, Glasgow G12 8QQ, Scotland.
(2) Department of Medical Physics + Bioengineering, UCL, UK
(3) Instrumentation Department, STFC (RAL), UK

Despite the continuing success of the charge couple device (CCD), the last 2 decades have seen APS devices become increasingly popular in their use as portable, low cost imagers. Despite suffering from higher readout noise than the CCD, APS have a number of advantages. These include lower power consumption, lower cost, random access and selective readout. The possibility to incorporate on-chip functionality such as analogue-to-digital conversion (ADC), timing logic for thresholding and gain adjustment is driving an increased interest in these devices from the scientific community. In 2004, A UK consortium (MI3) was formed under an RC-UK Basic Technology Programme to develop CMOS active pixel sensors for a broad range of scientific applications including space science, particle physics and medical imaging. During the programme 6 APS' were designed, fabricated and tested. Highlights from the project include: the LAS (Large Area Sensor), a novel stitched sensor designed for use in medical imaging; eLeNA (Low Noise), a test structure which develops a range of low noise pixels and OPIC (On Pixel Intelligent CMOS), a test structure designed for in-pixel intelligence including sparse read-out, ADC and storage in each pixel and thresholding.

11th International Workshop on Radiation Imaging Detectors
28 June - 2 July 2009, Prague, Czech Republic

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