GLAS-PPE/2009-15

Radiation Tolerance for a Large Pixel Detector for XFEL

A Blue (1), M. French(2), A. Mac Raighne(1) , P. Seller(2), U. Trunk(3), V. O'Shea(1)

(1) University of Glasgow, Kelvin Building, Glasgow G12 8QQ, Scotland.
(2) Instrumentation Department, STFC (RAL), UK
(3) Detector Systems, DESY, Notkestr. 85, 22607 Hamburg, Germany

his work investigates the possible damage to the LPD (Large Pixel Detector) from the expected irradiation levels at XFEL. MOS capacitors were designed and fabricated in the same material to be used for the final detector. A range of samples were subsequently irradiated at the DORIS III beamline at DESY to various fluences up to 100MGray. IV-CV measurements were performed pre and post irradiation to give an indication to how such fluences will affect the sensor material used for the LPD at XFEL

11th International Workshop on Radiation Imaging Detectors
28 June - 2 July 2009, Prague, Czech Republic

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