GLAS-PPE/2009-16

Evaluation of MCM-D technology for silicon strip detectors.

L. Eklund(1), A. Affolder(2), G. Casse(2),
A. Chilingarov(3), M. Tyndel(4), M. Weber(4)

(1) University of Glasgow, Kelvin Building, Glasgow G12 8QQ, Scotland.
(2) University of Liverpool, Department of Physics, Liverpool L69 7ZE, UK
(3) Lancaster University, Physics Department, Lancaster LA1 4YB, UK
(4) Rutherford Appleton Laboratory, Didcot OX11 0QX, UK

Multi-chip Modules - Deposited (MCM-D) is a technology that can be applied to silicon strip modules and promises advantages in terms of integration complexity and material budget. This technology permits to integrate the front-end hybrid, pitch adaptor and wire bonds on the silicon sensor. The principle is to deposit alternating dielectric and metal layers directly on the silicon, where traces and vias are etched with high resolution to produce a PCB like structure. This paper reports on a prototype MCM-D processing run of silicon strip wafers performed to evaluate suitability of the technology. This first run uses one dielectric layer, one metal layer, passivation and a final metallisation appropriate for wire-bonding. Connections are done through the first dielectric layer to the strips, the bias ring, bias resistors and guard rings. Hence the effects of the post-processing on the silicon sensor are evaluated measuring change in parameters such as I/V and C/V characteristics, inter-strip capacitance and resistance.

The 1st international conference on Technology and Instrumentation in Particle Physics
12-17 March 2009, Tsukuba, Japan

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