Active Edge sensor research

Introduction

Modern large particle physics experiments, such as ATLAS and CMS, require large-area tracking systems with nearly hermetic coverage. The essential building blocks of such systems are silicon sensors, which typically contain inactive regions at their periphery. Making a hermetic system requires either shingling the sensors with dead regions due to sensors periphery, or introduction of additional layers to compensate for the acceptance gaps. There are similar requirements in other fields including medical imaging and synchrotron science. For these applications additional layers are not possible as the x-rays are typically stopped by the incident X-rays to be imaged. To over come these limitations silicon sensors with reduced or zero non-active (dead) material on the perimeter of the sensor are under investigation. The two main areas of interest of the Glasgow group are the Scribe, Cleave and Passivate, (SCP) technique to produce a highly resistive defect free edge and the side wall implantation technique to produce a doped active edge.

SCIPP Scribe cleave and passivate (SCP)

Advacam side wall doped devices

Present work

Publications in this area

This paper details tests performed at the Diamond light source (UK) using a 15keV micron sized focused X-ray beam to map the spatial responce of the Advacam active edge and SCP slim edge silicon sensors. TimePix assemblies were used to readout the Advacam Active edge devices and the Alibava strip readout system was used for the SCP devices.